Simultaneously Good Stability and High Speed Based on Oxygen-Doped Zn15Sb85 Material

摘要：

The O-doped Zn15Sb85 materials were prepared by means of magnetron sputtering. The O concentration was under the control of the oxygen flflow rate. The total flflow rate was fifixed at 30 SCCM (Standard Cubic Centimeter per Minute). Through the preliminary screening of experimental data, we selected fifive samples for further study with the oxygen flflow rate of 0, 0.5, 1.0, 1.2 and 1.5 SCCM. The symbols of ZS and ZSOx (x = 0.5, 1, 1.2, 1.5) were used to represent the undoped and O-doped Zn15Sb85 materials with the oxygen gas flflow of x SCCM, respectively. Then, ZSOx materials were deposited by reactive sputtering of the Zn15Sb85 target in an Ar-O2 gas mixture. The power for the sputtering was fifixed at 30 W, with the working pressure for Ar 0.4 Pa. The substrate for material deposition was SiO2 (300 nm)/Si. The purity of Zn15Sb85 target was 99.999% and the thickness of fifilms were 50 nm controlled by sputtering time. The samples temperature was measured by a Pt-100 thermocouple located at a heating stage controlled by a TP 94 temperature controller (Linkam Scientifific Instruments Ltd, Surrey, UK). Thermal stability of amorphous materials was evaluated by isothermal timedependent resistance measurements. A near infrared spectroscopy (NIR) (7100CRT, XINMAO, China) was used to measure the optical bandgap. The phase structure was investigated by X-ray diffraction (XRD) (X’Pert Pro, Holland) operated at 40 kV and 40 mA using a Cu-Kα source with the 2θ degrees range from 20? to 60?. The binding states of the components were examined by X-ray photoelectron spectroscopy (XPS) (Thermo ESCALAB 250XI, America). The atomic force microscopy (AFM, FM-Nanoview 1000, China) was used to observe the surface morphology of fifilms. The real-time reflflectivity was measured by a picosecond laser pump-probe system (EKSPLA PL2143B, Lithuania). The light source used for irradiating the samples was a frequency-doubled model-locked neodymium yttrium aluminum garnet laser with the operating wave-length 532 nm and pulse duration 30 ps.

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